Mostrar el registro sencillo del ítem
dc.contributor.author | Ríos-González, J. A. | |
dc.contributor.author | Mis-Fernández, R. | |
dc.contributor.author | Camacho-Espinosa, E. | |
dc.contributor.author | Riech, I. | |
dc.contributor.author | Menéndez-Proupin, E. | |
dc.contributor.author | Flores, M. A. | |
dc.contributor.author | Orellana, W. | |
dc.contributor.author | Peña, J. L. | |
dc.date.accessioned | 2024-09-12T03:45:14Z | |
dc.date.available | 2024-09-12T03:45:14Z | |
dc.date.issued | 2020-03-01 | |
dc.identifier.issn | 1369-8001 | |
dc.identifier.uri | https://repositorio.uss.cl/handle/uss/11786 | |
dc.description | Publisher Copyright: © 2019 | |
dc.description.abstract | In this work, cadmium telluride (CdTe) thin films were doped with Sn using a low-cost co-sublimation technique by a homemade close-spaced sublimation (CSS) system. Sn amount was calculated to obtain CdTe film doped with a percentage content lower than 0.4 at%. Chemical, structural, morphological, and optical properties of the as-deposited CdTe (u-CdTe) and Sn-doped CdTe (t-CdTe) films were measured and compared. Raman and XPS characterization showed the presence of Sn in t-CdTe thin films and XRD analysis revealed a strong signal related to CdTe planes (220) and (311) and in a lesser extent a signal related to SnTe. Irregular shaped grains with similar size related to Sn incorporation in the films were found with FE-SEM technique. Photoluminescence spectrum indicates an energy band at 0.7 eV, generating a band inside of CdTe bandgap, due to defects induced by the Sn in CdTe lattice, matching with a theoretical study. The changes observed in Sn doped CdTe film suggest that it can be used for optoelectronics applications. | en |
dc.language.iso | eng | |
dc.relation.ispartof | vol. 107 Issue: Pages: | |
dc.source | Materials Science in Semiconductor Processing | |
dc.title | Inducing a level inside of CdTe bandgap doping with Sn using a co-sublimation technique by CSS | en |
dc.type | Artículo | |
dc.identifier.doi | 10.1016/j.mssp.2019.104836 | |
dc.publisher.department | Facultad de Ingeniería y Tecnología |
Ficheros | Tamaño | Formato | Ver |
---|---|---|---|
No hay ficheros asociados a este ítem. |