Universidad San Sebastián  
 

Repositorio Institucional Universidad San Sebastián

Búsqueda avanzada

Descubre información por...

 

Título

Ver títulos
 

Autor

Ver autores
 

Tipo

Ver tipos
 

Materia

Ver materias

Buscar documentos por...




Mostrar el registro sencillo del ítem

dc.contributor.author Alfonso-Herrera, Luis A.
dc.contributor.author Mondaca Espinoza, Felipe
dc.contributor.author Conejeros, Sergio
dc.contributor.author Torres-Martínez, Leticia
dc.contributor.author Mora-Hernandez, J. Manuel
dc.date.accessioned 2024-09-12T03:45:56Z
dc.date.available 2024-09-12T03:45:56Z
dc.date.issued 2024-05-31
dc.identifier.issn 1144-0546
dc.identifier.other Mendeley: fbd07cc9-2c3d-3016-8804-b0c7d19d53ce
dc.identifier.uri https://repositorio.uss.cl/handle/uss/11829
dc.description Publisher Copyright: © 2024 The Royal Society of Chemistry.
dc.description.abstract HKUST-1 MOF and HKUST-1-based compounds have been employed to develop active photocatalytic materials; however, a deep understanding of several fundamental physicochemical properties to explain the photocatalytic activity of these materials is limited. Several physicochemical properties of HKUST-1 were studied through experimental and computational approaches to determine its (photo)electrochemical (PEC) properties and applications. These properties were correlated with the structural features of the material and the photocatalytic activity towards the hydrogen evolution reaction. A meticulous characterization confirmed the synthesis of HKUST-1 using a slow evaporation methodology. XRD measurements revealed a large crystallite size (≈123 nm). Meanwhile, UV-vis spectroscopy, electrochemical measurements, and DFT calculations allowed us to identify three fundamental issues that limit the photocatalytic activity of HKUST-1: (i) a low relative permittivity of the semiconductor (ϵ r), (ii) a wide bandgap value, and (iii) a low reduction potential for the conduction band (CB). The issues mentioned above are related to high porosity, a small conjugated system, and the presence of open metal sites in the secondary building units (SBU) that constitute the CB, respectively. Instability problems are also related to the decrement of the observed open metal sites. Regarding PEC measurements, it was determined that HKUST-1 is an n-type semiconductor suitable for photocatalytic reduction or PEC oxidation processes, however, it presents recombination issues. Determining the relative permittivity for HKUST-1 through computational tools provides an accurate methodology to calculate the density of charge carriers (N D) through the Mott-Schottky equation. The measurements and analysis presented in this work point out the main issues responsible for low photocatalytic hydrogen evolution and suggest the employment of HKUST-1 in PEC oxidation processes. en
dc.language.iso eng
dc.relation.ispartof vol. 48 Issue: no. 25 Pages: 11377-11386
dc.source New Journal of Chemistry
dc.title Elucidating, understanding, and correlating the (photo)electrochemical and physicochemical properties of HKUST-1 through an experimental and computational approach en
dc.type Artículo
dc.identifier.doi 10.1039/D4NJ01657B
dc.publisher.department Facultad de Ingeniería, Arquitectura y Diseño
dc.publisher.department Facultad de Ingeniería y Tecnología


Ficheros en el ítem

Ficheros Tamaño Formato Ver

No hay ficheros asociados a este ítem.

Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem

Buscar


Listar

Mi cuenta