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dc.contributor.author | Clavería-Cádiz, Francisca | |
dc.contributor.author | Guajardo-Maturana, Raúl | |
dc.contributor.author | Muñoz-Castro, Álvaro | |
dc.contributor.author | Kuznetsov, Aleksey | |
dc.date.accessioned | 2024-09-26T00:47:51Z | |
dc.date.available | 2024-09-26T00:47:51Z | |
dc.date.issued | 2023-12 | |
dc.identifier.issn | 2211-7156 | |
dc.identifier.uri | https://repositorio.uss.cl/handle/uss/13570 | |
dc.description | Publisher Copyright: © 2023 | |
dc.description.abstract | Several copper complexes exhibiting luminescent properties have been studied. In this context, the possibility of incorporating them into the architecture of organic light-emitting diode (OLED) devices has been investigated to improve their efficiency and photophysical stability for predicting the suitability and character of the emissive material. Specifically, we unraveled the excitation mechanism of the Cu(I)X(dppt)(PPh3) complex [X = Br, I, dppt = 3,4-bis(diphenylphosphino)thiophene]. Since the intersystem crossing (ISC) depicts a necessary process, where the knowledge of the rate constant value enables the assessment of the suitability of the material, we calculated the reverse and intersystem crossing rates for the Cu(I) complexes contrasting with pure organic thermally activated delayed fluorescence (TADF) emitters, with the goal to emphasize that the structural design of the mononuclear copper(I) complexes results in similar singlet–triplet gaps, ΔEST, values (∼0.1 eV). Moreover, it shows a remarkable enhancement of spin–orbit coupling, which allows achieving ISC rates in the ns scale. The calculations were made in the Time-Dependent Density Functional Theory (TD-DFT) level framework with the accurate response of large molecules studied here. | en |
dc.language.iso | eng | |
dc.relation.ispartof | vol. 6 Issue: Pages: | |
dc.source | Results in Chemistry | |
dc.title | Unraveling the delayed fluorescence mechanism of copper(I) halide-phosphine emitters from DFT calculations | en |
dc.type | Artículo | |
dc.identifier.doi | 10.1016/j.rechem.2023.101201 | |
dc.publisher.department | Facultad de Ingeniería y Tecnología | |
dc.publisher.department | Facultad de Ingeniería, Arquitectura y Diseño |
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